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FQH8N100C 1000V N-Channel MOSFET
March 2008
QFET
FQH8N100C
1000V N-Channel MOSFET
Features
* * * * * * * 8A, 1000V, RDS(on) = 1.45 @VGS = 10 V Low gate charge (typical 53nC) Low Crss (typical 16pF) Fast switching 100% avalanche tested Improved dv/dt capability RoHS compliant
(R)
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.
D
G
GD S
TO-247
FQH Series
S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed
(Note 1)
Parameter
FQH8N100C
1000 8.0 5.0 32 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units
V A A A V mJ A mJ V/ns W W/C C C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds
850 8.0 22 4.0 225 1.79 -55 to +150 300
Thermal Characteristics
Symbol
RJC RCS RJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient
Typ
-0.24 --
Max
0.56 -40
Units
C/W C/W C/W
(c)2008 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FQH8N100C Rev. A
FQH8N100C 1000V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking
FQH8N100C
Device
FQH8N100C
Package
TO-247
TC = 25C unless otherwise noted
Reel Size
--
Tape Width
--
Quantity
30
Electrical Characteristics
Symbol
Off Characteristics BVDSS BVDSS/ TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr
NOTES:
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
Test Conditions
VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 1000 V, VGS = 0 V VDS = 800 V, TC = 125C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V VDS = VGS, ID = 250 A VGS = 10 V, ID = 4.0A VDS = 50 V, ID = 4.0 A VDS = 25 V, VGS = 0 V, f = 1.0 MHz
(Note 4)
Min
1000 -----3.0 ------
Typ
-1.4 -----1.2 8.0 2475 195 16
Max Units
--10 100 100 -100 5.0 1.45 -3220 255 21 V V/C A A nA nA V S pF pF pF ns ns ns ns nC nC nC
On Characteristics
Dynamic Characteristics
Switching Characteristics VDD = 500 V, ID = 8.0A, RG = 25 ---(Note 4, 5)
50 95 122 80 53 13 23 ---620 5.2
110 200 254 170 70 ---
----
VDS = 800 V, ID = 8.0A, VGS = 10 V
(Note 4, 5)
--
Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 8.0 A VGS = 0 V, IS = 8.0 A, dIF / dt = 100 A/s
(Note 4)
------
8.0 32.0 1.4 ---
A A V ns C
1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 25mH, IAS =8.0A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 8.0A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature
FQH8N100C Rev. A
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FQH8N100C 1000V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top :
Figure 2. Transfer Characteristics
10
1
10
1
ID, Drain Current [A]
ID, Drain Current [A]
150 C
o
10
0
10
0
25 C -55 C
Notes : 1. VDS = 50V 2. 250s Pulse Test
o
o
10
-1
Notes : 1. 250s Pulse Test 2. TC = 25
10
-1
10
0
10
1
10
-1
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue
3.0
RDS(ON) [ ], Drain-Source On-Resistance
IDR, Reverse Drain Current [A]
2.5
10
1
VGS = 10V
2.0
1.5
10
0
VGS = 20V
1.0
Note : TJ = 25
150
25
Notes : 1. VGS = 0V 2. 250s Pulse Test
0.5
0
5
10
15
20
25
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
4000 3500 3000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
Figure 6. Gate Charge Characteristics
12
VDS = 200V
10
Ciss
VGS, Gate-Source Voltage [V]
VDS = 500V VDS = 800V
Capacitance [pF]
2500 2000 1500 1000
8
Coss
Notes : 1. VGS = 0 V 2. f = 1 MHz
6
4
Crss
500 0 -1 10
2
Note : ID = 8A
10
0
10
1
0
0
10
20
30
40
50
60
70
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
FQH8N100C Rev. A
3
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FQH8N100C 1000V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2
Figure 8. On-Resistance Variation vs. Temperature
3.0
BVDSS, (Normalized) Drain-Source Breakdown Voltage
1.1
RDS(ON), (Normalized) Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
Notes : 1. VGS = 10 V 2. ID = 4 A
0.9
Notes : 1. VGS = 0 V 2. ID = 250 A
0.5
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case Temperature
10
2
Operation in This Area is Limited by R DS(on)
8
ID, Drain Current [A]
ID, Drain Current [A]
10
1
10 s 100 s 1 ms 10 ms DC
6
10
0
4
10
-1
Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse
2
10
-2
10
0
10
1
10
2
10
3
0 25
50
75
100
125
150
VDS, Drain-Source Voltage [V]
TC, Case Temperature [ ]
Figure 11. Transient Thermal Response Curve
10
0
Z JC(t), Thermal Response
D = 0 .5 0 .2
10
-1
0 .1 0 .0 5 0 .0 2 0 .0 1
10
-2
N o te s : 1 . Z J C (t) = 0 .5 6 /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C (t)
PDM t1
s in g le p u ls e
t2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
FQH8N100C Rev. A
4
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FQH8N100C 1000V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FQH8N100C Rev. A
5
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FQH8N100C 1000V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FQH8N100C Rev. A
6
www.fairchildsemi.com
FQH8N100C 1000V N-Channel MOSFET
www.fairchildsemi.com
FQH8N100C Rev. A
7
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM * TM
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* EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative / In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I34
2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
Preliminary
First Production
No Identification Needed Obsolete
Full Production Not In Production
(c) 2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com

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